Effect of barium doping on electrical and electromechanical properties of (1-x)(Na0.5Bi0.5)TiO3-xBaTiO3

Authors

  • Mohammed Mesrar Signals, Systems and Components Laboratory (LSSC), USMBA, FST-Fez, Imouzzer road B.P 2202, Morocco
  • Tajdine Lamcharfi
  • Nor-Said Echatoui
  • Farid Abdi
  • Fatima Zahra Ahjyaje
  • Mustapha Haddad

DOI:

https://doi.org/10.13171/mjc8319050908mm

Abstract

The influences of calcination temperature and doping with cobalt in A–site on structural and dielectric properties of CaCu3-xCoxTi4O12 (CCCxTO, x = 0.00, 0.02 and 0.10) ceramics sintered at 1050 0C for 8h were investigated. The ceramic samples are prepared by the conventional solid-state method using high purity oxide powders, and they are calcined at 850 °C, 950 °C and 1050 0C for 4h. The X-ray diffraction (XRD) analysis of pure and doped CCTO samples calcined at 950 °C and 1050 0C showed no traces of any other secondary phases, while impurity phases alongside CCTO phase in the x=0.00 sample calcined at 850 0C was observed. Scanning electron microscopy (SEM) investigation showed an increase in grain size with increasing of Co content and calcining temperature. Dielectric measurements indicated that the dielectric constant of the pure CCTO calcined at 1050 0C/4h has a low value in the frequency range of 1kHz up to 1MHz, whereas the substitution of Co up to x = 0.10 into CCTO caused a huge increase in the dielectric constant value of the calcined samples which is equal to 153419 and 18957 at 950 °C and 1050 0C respectively. The complex impedance analysis of all samples shows a decrease in resistance with an increasing temperature, which suggests a semiconductor nature of the samples

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Published

2019-05-11

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Section

Materials Chemistry